Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
B
Chatsworth, CA 91311
United States of America
Categories
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Software
Junction Measurement and Analysis
Materials Development Corporation
A comprehensive set of analyses for junction diode or Schottky barriers begins with C-V data gathering that adjusts the voltage step to the slope of the C-V characteristics. This assures an optimum set of C-Vdata whether the voltage range is small or large. Doping profile and resistivity profile are both available at the touch of a key. Plots of 1/C2 - V or Log(C) - Log (V+ phi) show doping uniformity and doping slope factor. Exclusive recalculation options allow adjustment of stray capacitance and area to facilitate calibration using a standard reference wafer of known doping or resistivity.
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Electrochemistry Tests
Materials Development Corporation
CyclicVoltammetry and Galvanostatic Charging are tests used throughout the industrial and scientific communities to study chemical reactions and behavior of electronic structures. They are extremely helpful in the monitoring of nano based dielectrics, used in super /ultra capacitors or self-assembled monolayers (SAMs). The Cyclic Voltammetry test applies a ramping voltage to a device and measures the resulting current. In acapacitor-like structure the current reveals loss in the dielectric as well as degradation over time. CyclicVoltammetry is used to characterize the performance of supercapacitors and ultracapacitors formed using various nano-technologies. It is also useful in the studies of self-assembled monolayers used for sensors.
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Ion Implant Analysis Option
Materials Development Corporation
Computes active dose, range, and straggle. Can model implants with various doses, energies and cap materials. Overlays theoretical and actual plots.
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FPP Software
Four Point Probe
Materials Development Corporation
For use with a manual four point prober, the MDC FPP Software operates in a convenient, single screen that displays both measurement parameters and testresults. The FPP software can measure Resistivity, Conductivity, Resistance, Doping, Thickness, and SheetResistance when used with a compatible current source and voltmeter or SMU.
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MOS Doping Profile Analysis
Materials Development Corporation
MDC uses the comprehensive Ziegler algorithm toconvert pulsed MOS C-V data to a doping profile. The doping profile is accurate from the oxide semiconductor interface to the maximum depletion depth and is therefore useful for low dose ion implant monitoring. Peak doping, range, and total active dose are computed. The technique is sensitive enough to resolve changes in the substrate doping profile due to redistribution during oxidation.
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Production C-V Measurement
Materials Development Corporation
The production software offers a streamlined C-V plotting and bias-temperature stress program with minimumoperator input. A single keystroke begins the measurement.
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Production Triangular Voltage Sweep (TVS) Option
Materials Development Corporation
In traditional TVS measurements, the operator must select the end points of the mobile ion peak todetermine the area to analyze. Though the selection of these points is a simple matter for the operator, the required input precludes using this technique in asemi-autonomous production environment. The goal of TVS Production testing is the rapid determination of mobile charge concentration with little or no operator input. The test methodology must be compatible with production environments where accuracy, easeof use, and minimum operator involvement are of paramount concern. Also, the possibility of automated wafer handling must be considered.
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MOS C-V Measurement and Analysis
Materials Development Corporation
MOS capacitance-voltage measurement is one of the most common process monitoring diagnostics employed in device manufacturing. A vast amount of information can be derived from this simple test.
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Quasi-Static Measurements
Materials Development Corporation
The Quasi-static measurement ompares a high frequency capacitance-voltage plot to a C-V plot measured near zero Hertz (quasi-static). By analyzing the difference in the depletion region of the curves, the interface trap density (Dit) can be determined in the sample under test.
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Solar Cells/ Photovoltaic Devices
Materials Development Corporation
MDC offers a comprehensive array of current-voltage, capacitance-voltage, and resistivity measurements to characterize solar cells and PV devices. CSM/Win systems and software can help to fine tune your process for maximum efficiency. Critical values such as series and shunt resistances, maximum power point (both actual and theoretical), and fill factor are automatically determined.
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Mercury Probes
Materials Development Corporation
MERCURY PROBES are precision instruments that enable rapid, convenient, and non-destructive measurements of semiconductor samples by probing wafers with mercury to form contacts of well-defined area.
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MOS Capacitance-Time Measurement and Analysis
Materials Development Corporation
The Capacitance-Time transient resulting from an MOS device pulsed into deep depletion reveals important information about bulk properties of the semiconductor and about damage or contaminants introduced during processing.
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Dielectric Constant
Materials Development Corporation
The Dielectric Constant option allows the user to measure the dielectric constant of a wide range of materials. Simply input a test voltage (in accumulation), the area (or diameter), and stray capacitance to determine the relative dielectric constant.
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Srive-Level Capacitance Profiling (DLCP) Measurement
Materials Development Corporation
Drive-levelcapacitance profiling is an extremely useful technique to characterize amorphoussilicon or other semiconductor material with large concentrations of deep band gap states.
