Zener Diode
current flow from cathode to anode reverses when zener voltage reached.
See Also: Diode, Laser Diode, Diode Test, Photodiode
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Schottky Mixer And Detector Diodes
Majority carrier diodes formed by plating a layer of metal on a layer of doped semiconductor, which forms a rectifying junction.
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External Cavity Diode Lasers
ECDLs
High-performance ECDLs and injection-locked optical amplifier.
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Laser Diode Collimators, 520nm - 785nm, Elliptical Beam
The Optoelectronics Company Ltd
Custom lasing wavelengths and power options are available. Both standard and custom configurations provide OEMs, end-users and systems integrators with complete, cost-effective laser solutions.
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MINIATURE SILICON DIODE TEMPERATURE SENSOR, 2 To 600 Degress Kelvin
Insight Product Company offers SILICON DIODE TEMPERATURE SENSORS CAN BE USED FOR TEMPERATURE Â MEASUREMENTS IN DIFFERENT FIELDS OF CRYOGENIC ENGINEERING AND EXPERIMENTAL PHYSICS. THEY ARE MINIATURE AND OPERATE IN THE TEMPERATURE RANGE FROM 2 TO 600 K.
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SP16T RF Pin Diode Switches To 10 GHz
Pulsar Microwave's 16-way switches cover 500 MHz to 10 GHz in single pole, 16-throw configuration. Maximum input power is 200 mW and switching time is 100 ns. SMA female connectors are standard. A 15-pin D-SUB male connector makes the internal connections to the power, ground and logic circuitry. Switching control is TTL with the option of line drivers and decoders.
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Point Contact Diodes
SemiGen’s 1N Series of Point Contact Mixer Diodes are designed for applications through KA band. Each device in this series is specially designed for low noise gure, impedance and VSWR. Our devices are drop in replacements for all military and commercial requirements. These diodes employ epitaxial silicon grown in a speci c reactor for optimized performance. They are suitable for use in stripline applications.
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Repair of Six Diode Bridge Assemblies, P/N 5989C
CEHCO is specialist in repair of various rectifier assemblies. One such assembly is shown below:Specifications:- Six Diode Bridge Assembly, P/N 5989C- AC input terminals: (3, 4 , 5)- DC output terminals: (1), POSITIVE and (2), NEGATIVE
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Low-Barrier Schottky Diode Detector, 10 MHz to 18 GHz
8470B
The Keysight 8470B 18 GHz Low-Barrier Schottky Diode (LBSD) detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking. A video load (Option 002) extends the square-law region to at least 0.1 mW (-10 dBm).
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Limiter Diodes
The SemiGen SLP7100 series of Limiter Diodes are processed with a high-resistivity epi that have thin intrinsic layers. These devices are typically in the 2 to 20 micron range of epi thickness and can be gold doped to achieve specific performance goals. These diodes are used in passive or active limiter designs in the 100 MHz to 30 GHz frequency ranges. They are ideal for use in high-power applications and can be supplied in chip form or in your choice of packages below.
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Planar-Doped Barrier Diode Detector, 0.01 to 18 GHz
8474B
The Keysight 8474B is a high-performance detector using a gallium arsenide, planar-doped barrier detecting element. It features extremely flat frequency response over its entire band of operation and very good frequency response stability versus temperature. The Keysight 8474B is also very rugged with high resistance to ESD damage. The Keysight 8474B detectors are available with 0.01 to 18 GHz and a type-N connector. This detector offers options for optimal square-law loads (Option 102) and for positive polarity output (Option 103). Because the unit-to-unit frequency response tracking of these devices is typically better than plus or minus 0.3 dB, no matched response option is offered.
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Low-Barrier Schottky Diode Detector, 10 MHz to 18 GHz
8472B
The Keysight 8472B Low-Barrier Schottky Diode (LBSD) detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking. A video load (Option 002) extends the square-law region to at least 0.1 mW (-10 dBm).
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SiC Diodes
ST’s silicon carbide diodes range from 600 to 1200 V – as single and dual diodes – and feature unbeatable reverse recovery characteristics and improved VF. Available in a wide variety of packages, from D²PAK to TO-247 and the insulated TO-220AB/AC, they offer great flexibility to designers looking for efficiency, robustness and fast time-to-market. ST’s SiC Schottky diodes show a significant power-loss reduction and are commonly used in hard-switching applications such as high-end-server and telecom power supplies, while also intended for solar inverters, motor drives and uninterruptible power supplies (UPS). ST’s automotive-grade 650 and 1200 V SiC diodes – AEC-Q101-qualified and PPAP capable – feature the lowest forward voltage drop (VF) on the market, for optimal efficiency in electric vehicle (EV) applications.
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Diode Temperature Monitor
SIM922
Stanford Research Systems, Inc.
The SIM922 Diode Temperature Monitor and the SIM923 Platinum RTD Monitor are designed to measure four sensors simultaneously. Based on the modular SIM platform, they provide high-performance and multiple-channel capability in a small footprint.
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Modular Laser Diode Test System (PXI/PXIe)
LTS8620
The LTS8620 test system is a modular PXI test system for testing and qualifying laser diodes. The system is able to generate extremely short current pulses. This minimizes the effects of heat on the laser diode.
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Diodes
Development target specification*PD=5W class*Capability for load dump surge：ISO7637-2, JASO A-1*Reliability standard：AEC-Q101*Package size：[W×L×H] 12.0×9.6×4.3(mm)
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SP2T RF Pin Diode Switches To 18 GHz
Pulsar Microwave's 2-way switches are available in absorptive and reflective designs from 20 MHz to 18 GHz. They are also referred to as single pole, double throw and abbreviated SPDT or SP2T. These switches have a typical VSWR performance of 1.6:1 or better and input power handling of 200 milliwatts maximum. Switching time is 100 nanoseconds, and isolation of 60 dB or greater for most models. Supply voltages are +5V and -5V, with TTL logic control voltage of 0 to 5 volts.Both absorptive and reflective SPDT switches are packaged into Pulsar Microwave's SW2 outline. Configuration is standard with SMA female connectors. Voltage is applied with wire wrap feed thru terminals. The housing serves as electrical ground, and two turret terminals are installed for wiring.
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Tester for Alternator Stator Windings and Diode Bridges
MS014
The equipment combines two devices: tester of stator windings and diode bridges. The device has small dimensions and a light weight, it was developed according to the requirements of contemporary service stations.The feature of the handset tester is diagnostics of stator windings and diode bridges with no additional testing and measuring devices.Diagnostics of stator windings is carried out through automatic identification of phase connection, detecting winding integrity and measuring the difference in phase distortion.
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Rotating Diode Assembly, P/N 6118CA
CEHCO is a specialist in the repair of Rotating Diode Assemblies.
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SP1T RF Pin Diode Switches To 18 GHz
Pulsar Microwave manufactures pin diode RF switches that are controlled by TTL logic. This configuration is known as single pole, single throw and is often abbreviated SPST or SP1T. They have been engineered to function in 50-ohm systems, and are designed to operate from 40 MHz to 18 GHz. They have a switching time of 100 nanoseconds and input power rating of 200 mW (23 dBm). Performance of 1.6:1 or better VSWR and minimum isolation of 60 dB is typical of most models.All switches of this type require both +5VDC and -5VDC to operate. Typical current consumption is +/- 30 mA. TTL control logic of 0 to +5VDC is required. Units comes standard with SMA connectors.
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Steering Diodes
ProTek's low capacitance Steering Diode Arrays provide high-speed data line and I/O port protection from transients caused by Electrostatic Discharge (ESD), Electrical Fast Transients (EFT), Tertiary Lightning and other induced voltages. Steering diodes divert the transient to the power-bus or ground and away from sensitive IC components.
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Two Diode Assembly, P/N 6030C
Two Diode Assembly, P/N 6030CEach diode is rated for 400 Amps, 1200 PIVTwo diodes are installed on one heatsinkDimensions: 8”H x 8”W x 10”DEstimated weight: 20 lbs.When A is greater than B, Battery 2 is reversed BiasWhen B is greater than A, Battery 1 is reversed Bias
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High-Speed Switching Diodes 33 To 140 GHz
Insight Product Company offers high-speed switching diodes with switching time up to 2 nsec and operating frequency range up to 140 GHz. Silicon p+-p-n-n+ high-speed switching diodes are designed to be used in mm-wave switching devices, phase changers, modulators, attenuators for the millimeter wavelength range. They are fabricated in the metal-ruby packages with hard-lead carrier (diameter 3.0 mm, 1.5 mm).
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Schottky Mixer and Detector Diodes
Macom Technology Solutions Holdings Inc.
Schottky diodes are majority carrier diodes formed by plating a layer of metal on a layer of doped semiconductor, which forms a rectifying junction. The type of metal and the type of dopant in the semiconductor determines the diode’s barrier height, which is a measure of the amount of energy required to force the diode into forward conduction. MACOM produces Si Schottky diodes as well as GaAs Schottky diodes for use as signal detectors or in frequency mixers.
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Solid State PIN Diode Transfer Switch, 100 MHz to 18 GHz
P9400C
The Keysight P9400C solid state PIN diode transfer switch offers outstanding performance in terms of port-to-port isolation, switching speed and low insertion loss over a broad operating frequency range of 100 MHz to 18 GHz. The P9400C is particularly well suited for ultra-fast RF and microwave switching applications in instrumentation, communications, radar, switch matrices and various other test systems where high isolation, speed and lifetime of a switch is critical.
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Osram Direct Emission Green Laser Diodes (510 - 530nm)
The Optoelectronics Company Ltd
The PLT3 520D laser diode can deliver 140mW pulses at 520nm with 8% efficiency, driven at 300mA at 50% duty cycle – OSRAM's previous limit was 80mW with the PL 520B. This new diode has been developed to work in MEMS-based scanners.
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MICROWAVE VARIABLE-CAPACITANCE DIODES FROM 1 to 40 GHz
Insight Product Company offers Microwave Variable-Capacitance Diodes with capacity coverage ratio over 10 times and operating in frequency range from 1 to 40 GHz. The p+ -n1 - n2 -n+ silicon variable-capacitance diodes are designed to electrically tune frequences and phases of microwave oscillators - parts of hybrid microcircuits that provide capsulation and protection against ambient action.
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Laser Diode
Yisinc Optical Technology Co., Ltd
Laser diode is an efficient radiation source for CW and pulsed operations.
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Low-Barrier Schottky Diode Detector, 10 MHz to 26.5 GHz
8473C
The Keysight 8473C Low-Barrier Schottky Diode (LBSD) detector has been widely used for many years in a variety of applications including leveling and power sensing . It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking.
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Osram High Power Blue Violet Laser Diodes (450-488nm)
The Optoelectronics Company Ltd
OSRAM Opto Semiconductors is a key player in the field of visible InGaN (Indium Gallium Nitride) lasers. OSRAM Opto Semiconductors offer leading product performance and innovative packaging. Thanks to their excellent beam quality, OSRAM laser diodes are ideally suited for the optical imaging of light. Not only that, but their small package size is particularly beneficial to highly compact systems, such as pico projectors. OSRAM laser diodes offer high efficiency and long lifetime: due to their excellent efficiency (ratio of light produced compared to electric power consumed), the temperature increase experienced by blue InGaN lasers during operation is kept to an absolute minimum, allowing them to deliver a long life – up to 10,000 hours at 40 °C.
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Diode Power Sensor
8487D
Excellent SWR for reducing mismatch uncertainty Accurate calibration and traceability to US National Institute of Standards and Technology (NIST) millimeter-wave sensor calibration Compatible with EPM (new N1913A/ 14A, E4418B/ 19B), EPM-P (E4416A/ 17A) and P-series (N1911A/ 12A) power meters, plus the E1416A VXI and discontinued 70100A and 43X power meter Accurate average power measurements over -70 to -20 dBm Frequency range 50 MHz to 50 GHzDiode power sensing element
