GaN
Gallium Nitride is a stable wide bandgap semiconductor material. Also known as: Gallium Nitride
See Also: LED, Transistor
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Product
Rad Hard GaN Drivers
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The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.
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Product
GaN 100W Power Amplifiers
PE15A5033F
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The PE15A5033F is a 100 W high gain Class A/AB Coaxial Linear Power Amplifier operating in the 0.7 to 2.7 GHz frequency range. The amplifier offers 100 Watts typical saturated power and 45 dB minimum small signal gain with 1.5 dB typical gain flatness @ Psat. The amplifier requires typically a +30V DC power supply. The SMA connectorized module is unconditionally stable and operates over the temperature range of 0C and +50C. The unit comes with a Heatsink and Fan.
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Product
Rad Hard GaN FETs
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Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.
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Product
Ruggedized SSPA 4 to 8 GHz, 40 W GAN Hybrid Module
AMP1110
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Exodus Advanced Communications
Ruggedized Solid State Power Amplifier. Our Best in Class Power Amplifier AMP1110 a 4 to 8 GHz, 40 W Minimum Saturated Power output module. The AMP1110 is a Class AB linear GaN hybrid design with instantaneous bandwidth. Other features include 4.0dB Peak to Peak flatness and 12A Max Consumption. This AMP1110 has Built-in protection circuits, high reliability and ruggedness. It is suitable for any application such as EW, EMI/RFI Lab, and High Power testing.
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Product
Solid State GaN (Gallium Nitride) Amplifiers
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Fairview Microwave’s solid state GaN (Gallium Nitride) power amplifiers (also called SSPAs) feature broad frequency bands ranging from 30 MHz to 7.5 GHz and very high gain levels from 43 to 60 dB. These GaN SSPAs also show impressive harmonic response (-15 to -20 dBc) under worst case conditions. Saturated output power levels range from 10W to 100W with 20% to 35% Power Added Efficiency (PAE). All of our high power solid state GaN amplifiers from Fairview have internally regulated single voltage supplies. Our GaN SSPAs are designed to withstand environmental conditions such as humidity, altitude, shock and vibration with an operating temperature ranges from -40°C to +85°C. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.
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Product
ST/MT Family
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MT System is a configurable test equipment suitable to verify static and dynamic parameters of power semiconductors (i.e. IGBT, MOSFET, DIODE, THYRISTOR, SiC, GaN, etc) packaged and unpackaged (discrete, module and substrate). ST System is a test equipment suitable to verify stability or drift of all static parameters of discrete power semiconductors.
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Product
DL-ISO 2 Vpp MMCX Tip
DL-ISO-2V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
Low Temperature Gas Source
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Get a low-cost means to introduce a gas without thermal pre-cracking using Veeco’s low-temperature gas source for molecular beam epitaxy (MBE) systems. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. It is an ideal gas injector for CBr4 for carbon doping in GaAs and NH3 for GaN growth, as well as any other gases that do not require thermal pre-cracking. Enhance system capabilities further by combining the source on one mounting flange with an Atomic Hydrogen Source or 5cc Dopant Source.
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Product
Defect Inspection Systems
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Candela® defect inspection systems detect and classify a wide range of critical defects on compound semiconductor substrates (GaN, GaAs, InP, sapphire, SiC, etc.) and hard disk drives, with high sensitivity at production throughputs.
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Product
Silicon & Compound Wafers
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Compound semiconductors are undergoing a major expansion addressing many new applications and using various materials such as SiC, GaN, GaAs and others, to improve the performance of new devices in several segments such as Power and Face Recognition.
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Product
DL-ISO 10 Vpp MMCX Tip
DL-ISO-10V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
Power Management Controller
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Macom Technology Solutions Holdings Inc.
Hghly integrated Power Management Integrated Circuit for GaN Power Amplifier
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Product
Wafer Thickness Measuring System
WT-425
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Contact type can measure any materials within 0.2 µm (2 σ at 20℃ ±1℃). The wafer floats positions while measurement points change and it does not damage even thin wafers. Best for the process control of compound wafers and oxide wafers. (SiC, GaN, LT, Sapphire and Bonded Wafers)
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Product
50 µs Pulse Medium Current Source/Measure Unit (MCSMU)
B1514A
Source Measure Unit
The 50 s Pulse Medium Current SMU is an SMU designed for faster pulsed IV measurement. It enables a pulsed measurement down to 50 s pulse width, a 10 times or more narrow pulsed measurement than provided by a comparable conventional SMU. In addition, the instrument offers a wider range and versatility, up to 30 V / 1A, with voltage/current programmability. It is useful to characterize high to medium power devices on the new materials such as SiC and GaN, and organic devices, and the MCSMU expands your choices of pulsed IV measurement.
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Product
Solid-State High Power Amplifier 18 - 26.5 GHz
AMP4065LC-2
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Exodus Advanced Communications
Designed for EMI/RFI, lab, and general communication applications. Exodus Broadband SSPA product feature GaN, GaAsFET discrete and Chip & Wire Hybrid technologies covering one octave through decades frequency ranges from Operating Frequency Range 18.0-26.5 GHz.
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Product
High Voltage Switching Test System
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The advanced development of new technologies, such as SiC and GaN, have opened the opportunity for more efficient and higher voltage/power performance in switching and power management circuits. Their high cutoff frequencies, low on-state resistance, and very high breakdown voltages can increase power supply power handling densities approaching hundreds of watts/inch. Reliability of these new technologies and techniques is critical for realizing practical applications. While Silicon devices have a rich history of proven reliability, these newer compound semiconductor technologies are too new to have a reliability history and have not been well proven. Further, process variations, even in well-controlled lines, yield widely varying results. This has driven the need for additional testing and to burn-in devices prior to delivery.
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Product
DL-ISO 40 Vpp MMCX Tip
DL-ISO-40V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
Wideband GaN Amplifiers
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The Teledyne RF & Microwave family of GaN-based amplifiers maximizes power density and efficiency, and establishes a new benchmark for small size in the 0.1 to 6.0 GHz range that operates over multi octave. With dimensions of 2.5"L x 2"W x 0.42"H at only 2.1 cubic inches, these modular, non-ITAR GaN amplifiers maintain the rugged design characteristics needed for harsh airborne and land based requirements.
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Product
Solid State Broadband High Power Amplifier
Model 2215
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The 2215 is suitable for octave bandwidth high power CW, modulated, and pulse applications. This amplifier utilizes high power GaN devices that provide wide frequency response, high gain, high peak power capability, and low distortions. Exceptional performance, long-term reliability and high efficiency are achieved by employing advanced broadband RF matching networks and combining techniques, EMI/RFI filters, and all qualified components. The amplifier is constructed within a single 5RU drawerincluding the forced air-cooling. Available operating voltage configurations are single-phase 220 VAC up to 400 Hz and 28 VDC.
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Product
Solid-State RF amplifier module for High Power Testing
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Exodus Advanced Communications
Exodus introduces the AMP1071 - a Solid-State RF amplifier module covering the entire ultra-wide 2.0-20.0GHz frequency range instantaneously at 20W CW minimum. Using State of the Art GaN devices, the AMP1071 operates from a 32VDC source at less than 10A consumption. This module is suitable for use with all single channel modulation standards and applications requiring high power and ultra-wide band coverage. It has built-in protection circuits, high reliability and ruggedness. Typical applications include High Power Testing, EMI/RFI, EW and Communications and Jamming.
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Amplifiers
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We have designed and manufactured amplifiers using all major semiconductor materials, LDMOS, GaN, GaAs, and InP, to produce narrow, wideband, and pulse, receive and transmit amplifiers from 1 MHz to 220 GHz and power levels from mW to over 10 kW.
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Product
High Voltage Optically Isolated Probe, 700 MHz Bandwidth. Includes soft-carrying case.
DL07-ISO
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The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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Product
Broadband High Power Amplifiers
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Chengdu KeyLink Microwave Technology Co., Ltd.
KeyLink's broadband high power amplifiers are available for operating frequencies from 1 MHz to 18 GHz. Power levels for octave and multi-octave designs range from 2 watts to over 500 watts. Based on state-of-the-art GaN, GaAs, LDMOS power devices and MMICs, KeyLink designs and manufactures SSPA(solid state power amplifiers ) with excellent performance in terms of high efficiency over ultra-wide working band, high reliability and ruggedness.
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Standard GaN Amplifiers
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A GaN (Gallium Nitride) amplifier is a power amplifier that uses GaN, a wide-bandgap semiconductor material, to provide high power density, efficiency, and frequency capabilities.
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Product
High-Power CW Amplifiers
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Our family of solid-state power amplifiers (SSPAs) utilizes proprietary technology and a proven building block approach that enables rapid customization to specific requirements. The world-class design team understands the tradeoffs between GaAs versus GaN and FET versus MMIC to quickly achieve the right design for the right problem. Whether you need a connectorized compact GaN SSPA or an integrated SSPA assembly, we have the technical know-how to deliver on-time and on-budget.
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Product
60 V Common Mode Differential Probes
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The 60 V Common Mode Differential Probes are the ideal probes for lower voltage GaN power conversion measurement with the highest accuracy, best CMRR, and lowest noise.
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Product
DL-HCM Series High-Temperature Solder-In Tip
DL-HCM-HiTemp
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60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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Product
Power Amplifiers
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Analog Devices MMIC-based GaN and GaAs power amplifiers cover the low hundred MHz frequency range up through and including components in the W band (75 GHz to 110 GHz). In addition to components, our portfolio also includes GaN-based power amplifier modules with output power exceeding 8 kW. Designed for excellent linearity at high output power, our power amplifiers maintain good heat dissipation and high reliability at elevated temperatures for the wide variety of wired and wireless applications that they are used in.
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Product
1 GHz 60 V Common Mode Differential Probe
DL10-HCM
Differential Probe
60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
