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GaN
Gallium Nitride is a stable wide bandgap semiconductor material. AKA: Gallium Nitride
See Also: LED, Transistor
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Power Device Analyzer / Curve Tracer
B1505A
The Keysight B1505A Power Device Analyzer / Curve Tracer is the only single box solution available with the capability to characterize high power devices from the sub-picoamp level up to 10 kV and 1500 A. These capabilities allow evaluation of novel new device such as IGBT and materials such as GaN and SiC. The B1505A supports a variety of modules: high voltage SMU (HVSMU), high current SMU (HCSMU), ultra high current (UHC) module, ultra high voltage (UHV) module and high voltage medium current (HVMC) module. The B1505A also supports: high-power SMU (1 A/200 V), medium-power SMU (100 mA/100 V) ,medium-current SMU (1 A/30V pulsed, 100 mA/30V DC) and a multi-frequency capacitance measurement unit (1 kHz 5 MHz). Its ten-slot modular mainframe allows you to configure the B1505A to suit your measurement needs.
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Radio Frequency (RF) And Microwave Products
Enable your 5G, aerospace, defense, test and measurement or industrial RF wireless applications with our portfolio of RF and microwave devices. These include high reliability RF diodes, Gallium Nitride (GaN) and Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) amplifiers, frequency translation and power transistor devices, switches, attenuators, varactors, filters and more.
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Dynamic Test Systems
H3TRB | HTGB (HTGS) | RTGB (RTGS)
Durability and reliability of wide-bandgap materials such as SiC and GaN are an important topic. The focus here is on new failure mechanisms whose effects are not visible with traditional H(3)TRB/HTGS – but which nevertheless have an influence on the real application.
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Osram High Power Blue Violet Laser Diodes (450-488nm)
The Optoelectronics Company Ltd
OSRAM Opto Semiconductors is a key player in the field of visible InGaN (Indium Gallium Nitride) lasers. OSRAM Opto Semiconductors offer leading product performance and innovative packaging. Thanks to their excellent beam quality, OSRAM laser diodes are ideally suited for the optical imaging of light. Not only that, but their small package size is particularly beneficial to highly compact systems, such as pico projectors. OSRAM laser diodes offer high efficiency and long lifetime: due to their excellent efficiency (ratio of light produced compared to electric power consumed), the temperature increase experienced by blue InGaN lasers during operation is kept to an absolute minimum, allowing them to deliver a long life – up to 10,000 hours at 40 °C.
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Narrow band & Linear SSPA
Exodus Advanced Communications
Exodus Narrowband CW and Linearized SSPA products feature LDMOS, GaN,GaAsFET discrete and Chip & Wire Hybrid technologies covering frequency ranges from 1MHz to 26.5GHz at power levels exceeding 1KW for Modules and 10KW for Systems
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Power Management Controller
Macom Technology Solutions Holdings Inc.
Hghly integrated Power Management Integrated Circuit for GaN Power Amplifier
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GaN 100W Power Amplifiers
PE15A5033F
The PE15A5033F is a 100 W high gain Class A/AB Coaxial Linear Power Amplifier operating in the 0.7 to 2.7 GHz frequency range. The amplifier offers 100 Watts typical saturated power and 45 dB minimum small signal gain with 1.5 dB typical gain flatness @ Psat. The amplifier requires typically a +30V DC power supply. The SMA connectorized module is unconditionally stable and operates over the temperature range of 0C and +50C. The unit comes with a Heatsink and Fan.
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Rad Hard GaN Drivers
The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.
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High Density Plasma Etching System for 200mm substrates
Model DRIE-1200-LL-ICP
Single process chamber for high rate plasma etching of 200mm wafers. Loadlocked. Stainless steel construction. Capabilities of smaller, multiple wafer throughput. Substrate materials include (but are not limited to) silicon, silicon oxynitrides, SiC, SiGe, Aluminum, and III-V compounds including GaAs, GaN, GaP, and InP. Stable plasma generation capabilities to below 1 mTorr. Five, Six, or Eight gas mass flow controllers are standard. Expanded or reduced numbers are available upon request.
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Driver Amplifiers (< 3 W)
Qorvo's driver amplifiers are designed to provide good linear or efficiency performance for gain stages prior to the final power amplifier in a transmitter chain. These products support frequencies up to 46 GHz, using process technologies such as InGaP HBT, power pHEMT, E/D pHEMT and GaN.
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High Voltage Optically Isolated Probe, 1 GHz Bandwidth. Includes soft-carrying case.
DL10-ISO
The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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RF High Power Amplifier Modules
Analog Devices MMIC-based GaN and GaAs power amplifiers cover the low hundred MHz frequency range up through and including components in the Ka-band (29 GHz to 31 GHz). Our portfolio also includes GaN-based power amplifier modules with output power exceeding 8 kW. Designed for excellent linearity at high output power, our power amplifiers maintain good heat dissipation and high reliability at elevated temperatures for the wide variety of test, radar, and aerospace and defense applications that they are used in.
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T/R（Transceiver Module）
Chengdu KeyLink Microwave Technology Co., Ltd.
RF Amplifiers up to 500MHz LDMOS and GaN are applied for this frequency range of Narrow and Broad band including VHF, UHF bands amplifier modules and offers low risk on heat radiation and long term sustainable operation. Also, controlling and protection circuits are designed.
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DL-ISO 10 Vpp MMCX Tip
DL-ISO-10V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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MPI Sorter Series
MPI’s Sorter Series are improving production efficiency and yields for market sectors related to LED chip, package production, discrete device handling, and IC substrate manufacturing. Deploying MPI’s Pick & Place technology, the Sorter Line offers dedicated sorting and defect inspection solutions particularly suited for GaN, GaAs, Vertical LED Chip, Flip Chip, and Laser Diode applications. With a proven heritage of and market-advanced technologies, MPI offers competitive and differentiated solutions that are scalable and cost-effective.
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DL-ISO 200 Vpp MMCX Tip
DL-ISO-200V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Solid-State High Power Amplifier 18 - 26.5 GHz
AMP4065LC-2
Exodus Advanced Communications
Designed for EMI/RFI, lab, and general communication applications. Exodus Broadband SSPA product feature GaN, GaAsFET discrete and Chip & Wire Hybrid technologies covering one octave through decades frequency ranges from Operating Frequency Range 18.0-26.5 GHz.
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High Voltage Optically Isolated Probe, 700 MHz Bandwidth. Includes soft-carrying case.
DL07-ISO
The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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High-Power CW Amplifiers
Our family of solid-state power amplifiers (SSPAs) utilizes proprietary technology and a proven building block approach that enables rapid customization to specific requirements. The world-class design team understands the tradeoffs between GaAs versus GaN and FET versus MMIC to quickly achieve the right design for the right problem. Whether you need a connectorized compact GaN SSPA or an integrated SSPA assembly, we have the technical know-how to deliver on-time and on-budget.
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DL-ISO 2500 Vpp Square Pin Tip
DL-ISO-2500V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Pulsed IV
AURIGA 4850
Auriga’s 4th generation pulsed IV/RF characterization system delivers unparalleled performance, capturing measurements with incredible speed and accuracy. Pulsed IV (current-voltage) measurements have emerged as the preferred method of capturing current-voltage characteristics of active devices such as field effect (FETs) and bipolar junction (BJTs) transistors. With the growing popularity of higher-power devices, like GaN HEMTs, LDMOS, SiC, and graphene, current and voltage requirements are constantly being pushed higher and higher.
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Silicon & Compound Wafers
Compound semiconductors are undergoing a major expansion addressing many new applications and using various materials such as SiC, GaN, GaAs and others, to improve the performance of new devices in several segments such as Power and Face Recognition.
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IsoVu Isolated Probes
The IsoVu Measurement Systems can make nearly impossible measurements – like high-side Vgs- a reality, providing today’s power engineer with measurement insights not available in other power systems and instruments. When performing near-impossible measurements, especially in those involving Gallium Nitride (GaN) and Silicon Carbide (SiC), it can be extremely time consuming and cumbersome. IsoVu eliminates those concerns: IsoVu probes offer better common mode rejection and higher bandwidth for high EMI environments and on power FETs like SiC and GaN.
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Solid-State RF amplifier module for High Power Testing
Exodus Advanced Communications
Exodus introduces the AMP1071 - a Solid-State RF amplifier module covering the entire ultra-wide 2.0-20.0GHz frequency range instantaneously at 20W CW minimum. Using State of the Art GaN devices, the AMP1071 operates from a 32VDC source at less than 10A consumption. This module is suitable for use with all single channel modulation standards and applications requiring high power and ultra-wide band coverage. It has built-in protection circuits, high reliability and ruggedness. Typical applications include High Power Testing, EMI/RFI, EW and Communications and Jamming.
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Solid State Power Amplifiers
Skylink SSPAs incorporate state-of-art DPD and well-done Heat Dissipation technologies with available LDMOS, GaN & GaAs Chips. Solutions of SSPA frequency range from 9kHz to 50GHz and output power up to kilowatts and includes basic PA modules to integrated chassis with embedded software for local and remote control and monitoring.
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Amplifiers
We have designed and manufactured amplifiers using all major semiconductor materials, LDMOS, GaN, GaAs, and InP, to produce narrow, wideband, and pulse, receive and transmit amplifiers from 1 MHz to 220 GHz and power levels from mW to over 10 kW.
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250 MHz 60 V Common Mode Differential Probe
DL02-HCM
60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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DL-HCM Series Accessories Kit with Probe Holder, Micro IC Grabbers (Qty. 2), and Y-Banana Adaptor
DL-HCM-Acc-Kit
60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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GaN Amplifiers
SBP-3233831838-KFKF-E1-HR
Model SBP-3233831838-KFKF-E1-HR is a power amplifier with a typical small signal gain of 18 dB and a nominal Psat of +38 dBm across the frequency range of 32 to 38 GHz. The DC power requirement for the amplifier is +30 VDC/2 A. The mechanical configuration is an inline structure with K(F) connector as its input port and output port. Other port configurations, such as K connectors and WR-28 waveguides for either the input or output, are also available under different model numbers.
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Broadband High Power Amplifiers
Chengdu KeyLink Microwave Technology Co., Ltd.
KeyLink's broadband high power amplifiers are available for operating frequencies from 1 MHz to 18 GHz. Power levels for octave and multi-octave designs range from 2 watts to over 500 watts. Based on state-of-the-art GaN, GaAs, LDMOS power devices and MMICs, KeyLink designs and manufactures SSPA(solid state power amplifiers ) with excellent performance in terms of high efficiency over ultra-wide working band, high reliability and ruggedness.
