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Switches-DPDT
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Millimeter Wave Control Devices
Ducommun millimeter wave products include various control devices for system integration. The CAE, CPS, CPD and CPM series control devices are discrete or MMIC based PIN diode attenuators and switches. The CAF, CAL, CAR and CPL series control devices are waveguide based mechanical tunable attenuators and phase shifters. These devices are offered to cover the frequency range from 18 GHz to 110 GHz.
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SP4T RF Pin Diode Switches To 16 GHz
The 4-way series of absorptive and reflective switches operate from 100 MHz to 16 GHz. They are rated at 200 mW maximum input power and have a switching time of 100 ns. SP4T switches that operate up to 8 GHz have a maximum VSWR of 1.6:1 and minimum isolation of 60 dB. All absorptive and reflective switches manufactured by Pulsar Microwave require both positive and negative 5-volt supplies. Additionally, the TTL control logic operates from 0 to +5 VDC. Voltage connection is made with feed thru terminals. Ground connection is made through the chassis and turret terminals.
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PIN Diode Switches
After producing quality PIN diode switches in-house for many years, K&L Microwave is pleased to offer packaged options for customer applications. The offerings below are intended to highlight standard products; however, with our extensive in-house capabilities, custom parts are also available.
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Switches-SP4T
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Switches-SPST
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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SP8T RF Pin Diode Switches To 12 GHz
Pulsar Microwave manufactures 8-way absorptive and reflective RF switches in single-pole 8-throw configuration. They fulfill broadband and narrowband requirements from 40 MHz to 12 GHz and handle 200 milliwatts input power. The SP8T switches have an isolation of 60 dB and switching time of 100 ns. Most models specify 1.6:1 or better VSWR at all ports. The SP8T switches operate on a power supply of +/- 5VDC and switching control is 0-5 TTL logic. The unit comes standard with SMA female connectors. Options for control are line drivers and decoders.
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Switches-SP5T
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Switch Drivers
Macom Technology Solutions Holdings Inc.
MACOM’s switch drivers bridge the gap between digital control signals and the analog voltages and currents required to drive our extensive family of RF, microwave and millimeter wave PIN diode and FET switches.
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Wide Band Filters (multi-octave)
ERF-5W™ Series (Single & Dual)
The new ERF-5W™ filter takes Pole/Zero’s MINI-ERF® technology to a higher level of RF power handling, with 5W (average) in-band power handling, and covering the entire military tactical radio tuning range of 30-520 MHz in one integrated package. This tunability is accomplished by the use of three poles of selectivity, multiple internal tunable filters along with high performance PIN diode RF band select switches. The tunable filters are designed to minimize size and power consumption, while maintaining high RF power handling and linearity characteristics. Serial control is accomplished via a standard Serial Peripheral Interface (SPI)-based bus.
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SPDT PIN Diode Switches
Fairview offers a comprehensive selection of 23 different models of SPDT PIN diode switches that cover frequencies ranging from 10 MHz to 67 GHz. The high isolation levels up to 80 dB ensure that unwanted signals will not leak into the desired signal path. Other critical performance features include low insertion loss as low as 1.1 dB and fast switching speed performance as low as 50 nanoseconds. Both absorptive and reflective designs are available and every model utilizes integrated TTL compatible high speed driver logic circuitry. These SPDT switches are constructed using MIL-Grade rugged coaxial packages and several models support field replaceable connectors. All models are EAR99.
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Switches-Limiter
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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SIL Reed Relays
Series 105
• SoftCenter™ construction• Highest quality instrumentation grade switches• Encapsulated in a plastic package with internal mu-metal magnetic screen• Wide range of switch confi gurations -Form A, 1 Form B, 2 Form A, 1 Form C• Two pole relay requires the same board area as the single pole type• Dry and mercury wetted switches are available with the same pin configuration and footprint.• Many benefits compared to industry standard relays. Learn more here >.• Insulation resistance greater than 10E12 Ohms (1TOhms) for dry Form A devices• 5, 12 and 24 Volt coils are standard, with or without internal diode• 100% tested for dynamic contact resistance
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Switches-SP6T
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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SP6T RF Pin Diode Switches To 12 GHz
The SP6T series of 6-way absorptive and reflective switches manufactured by Pulsar Microwave cover applications from 300 MHz to 12 GHz. They have an isolation of 60 decibels and most models specify 1.6:1 or better return loss throughout frequency band. These 6-way switches require a +/- 5VDC supply to operate. Switching control uses individual 0-5V TTL control logic. Voltage and logic control interfaces into a system using a 9-pin D-SUB connector installed.
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Beam Lead PIN Diodes
The SemiGen SBL 2000 series Beam Lead PIN Diodes feature fast switching speeds at both low capacitance and resistance. Beam Lead PIN Diodes have high levels of mechanical strength and stability during assembly. These diodes are suitable for microstrip or stripline circuits as well as circuits requiring high isolation from a series of mounted diodes such as multi-throw switches, phase shifters, attenuators and modulators.
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E & W-Band PIN Diode Waveguide Switches
Fairview Microwave’s single-pole single-throw (SPST) and double-pole double-throw (DPDT) PIN diode waveguide switches feature fully integrated WR-10 and WR-12 waveguide ports and cover popular E-band (60 to 90 GHz) and W-band (75 to 110 GHz) frequencies. Switch circuits integrate low loss Fin-line assemblies with high performance GaAs beam-lead diodes that results in 4 dB insertion loss, greater than 25 dB of Isolation and fast switching speed < 300 nsec.
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SP16T RF Pin Diode Switches To 10 GHz
Pulsar Microwave's 16-way switches cover 500 MHz to 10 GHz in single pole, 16-throw configuration. Maximum input power is 200 mW and switching time is 100 ns. SMA female connectors are standard. A 15-pin D-SUB male connector makes the internal connections to the power, ground and logic circuitry. Switching control is TTL with the option of line drivers and decoders.
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SP1T RF Pin Diode Switches To 18 GHz
Pulsar Microwave manufactures pin diode RF switches that are controlled by TTL logic. This configuration is known as single pole, single throw and is often abbreviated SPST or SP1T. They have been engineered to function in 50-ohm systems, and are designed to operate from 40 MHz to 18 GHz. They have a switching time of 100 nanoseconds and input power rating of 200 mW (23 dBm). Performance of 1.6:1 or better VSWR and minimum isolation of 60 dB is typical of most models.All switches of this type require both +5VDC and -5VDC to operate. Typical current consumption is +/- 30 mA. TTL control logic of 0 to +5VDC is required. Units comes standard with SMA connectors.
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RF/Microwave Components and Integrated Microwave Subsystems
PIN Diode Switches, PIN Attenuators, PIN Limiters, Video Products, Switching Assemblies, Integrated Subsystems
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Switches-SP8T
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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SP5T RF Pin Diode Switches To 12 GHz
Pulsar Microwave's 5-way RF switches cover bands from 300 MHz to 12 GHz in both absorptive and reflective configuration. These SP5T switches have a rating of 200 mW maximum input power and a switching time of 100 ns. They are specified with a minimum isolation of 60 dB and most models maintain a VSWR of 1.6:1 or better on all ports. The SP5T switches are driven by TTL logic control circuitry and require both positive and negative 5-volt supplies for operation. A 9-pin D-SUB connector provides the interface for the power and logic voltages.
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SP3T RF Pin Diode Switches To 18 GHz
Pulsar Microwave manufactures 3-way absorptive and reflective switches for use in 50-ohm systems. These SP3T switches operate from 100 MHz to 18 GHz and handle 200 mW input power. VSWR performance is often 1.6:1 or better with 100 ns switching time. Minimum isolation of 60 dB is specified for most units. Absorptive and reflective switches require +5V and -5V power supply to function. Control logic is from 0 to +5 volts. All voltage and ground connections are made by feed thru and turret terminals, respectively.
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Wide Band Filters (multi-octave)
MINI-ERF® Series
The MINI-POLE® Extended Range Series of tunable filters was developed to address applications needing a small, surface mount package with wide tunability. This tunability is accomplished by the use of multiple internal tunable filters along with high performance PIN diode RF band select switches all contained in one housing. The tunable filters are designed to minimize size and power consumption while maintaining high RF power handling and linearity characteristics. Parallel or serial digital interface can be selected by a mode pin for ease of integration into your design.
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SP2T RF Pin Diode Switches To 18 GHz
Pulsar Microwave's 2-way switches are available in absorptive and reflective designs from 20 MHz to 18 GHz. They are also referred to as single pole, double throw and abbreviated SPDT or SP2T. These switches have a typical VSWR performance of 1.6:1 or better and input power handling of 200 milliwatts maximum. Switching time is 100 nanoseconds, and isolation of 60 dB or greater for most models. Supply voltages are +5V and -5V, with TTL logic control voltage of 0 to 5 volts.Both absorptive and reflective SPDT switches are packaged into Pulsar Microwave's SW2 outline. Configuration is standard with SMA female connectors. Voltage is applied with wire wrap feed thru terminals. The housing serves as electrical ground, and two turret terminals are installed for wiring.
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Switches-SP3T
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Switches-SPDT
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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PIN Diodes
The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide passivation or ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages.
