Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
#B
Chatsworth, CA 91311
United States of America
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Customized Software
Materials Development Corporation
If the software packages offered do not meet your specific needs,special software can be written for custom applications.The engineers and programmers at MDC candevelop or modify applications to fit your requirements. Examples include: *Customer specific measurements *Interfacing with required meters *Production versions of measurements *Interfacing with probers and other measurement platforms *Specialized requirements
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MOS Doping Profile Analysis
Materials Development Corporation
MDC uses the comprehensive Ziegler algorithm toconvert pulsed MOS C-V data to a doping profile. The doping profile is accurate from the oxide semiconductor interface to the maximum depletion depth and is therefore useful for low dose ion implant monitoring. Peak doping, range, and total active dose are computed. The technique is sensitive enough to resolve changes in the substrate doping profile due to redistribution during oxidation.
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Cryogenic Probe Station
CryoPro
Materials Development Corporation
The MDC Model 441 Cryogenic Probe Station is a cost effective alternative to high-priced vacuum based cryogenic probe stations. With up to five probes available and sample diameters up to six inches, the MDC Cryogenic Probe Station allows for electrical measurements at temperatures near liquid nitrogen levels (77K).
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Copper Diffusion TestSystems
Materials Development Corporation
MDC announces the addition of software and hardware for copper diffusion studies to its CSM/Win suite of semiconductor test systems and software. This new CSM/Win feature plays an important part in the development of processes and materials for the next advance in integrated circuit technology that employscopper as a conductor. Special Current-Voltage Bias-Temperature Stress (IV-BTS) software can measure the degradation of insulator quality due to copper diffusion.Multiple test sites can be stressed with a constant voltage while the current through each site is measured and recorded. The Current-Voltage Bias-Temperature Stress test supplements conventional MOS C-V measurements and Triangular Voltage Measurements (TVS) that are also employed in copper diffusion studies.
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C-V Plotters
Materials Development Corporation
MDC will tailor your CSM/Win Semiconductor Measurement System for your exact requirements. Choose the best capacitance meter, output device, and probe station for your needs. All CSM/Win C-V plotters feature the latest Dell Computers. The computer and capacitance meters are rackmounted in one compact enclosure. When ordered with a hot chuck or probe station, MDC can deliver a turnkey system of unparalleled performance.
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Triangular Voltage Sweep (TVS) Option
Materials Development Corporation
The TVS method measures the current-voltage characteristics of an MOS device at high temperature. This technique, which allows direct measurement of mobile ionmovement, has higher sensitivity and is much faster than the conventional CVBT measurement.
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TFT Test Systems
Materials Development Corporation
Model CSM/Win-TFT TEST SYSTEMS allows electrical measurements of thin film transistors (TFT's) used in flat panel displays (FPD's). MDC TFT TEST SYSTEMS can quickly and efficiently measure critical transistor parameters without the need for expensive parametric testers. Various model TFT TEST SYSTEMS are available for testing both linear and saturation characteristics to find parameters like ION, IOFF, mobility, and threshold voltage.
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Electrochemistry Tests
Materials Development Corporation
CyclicVoltammetry and Galvanostatic Charging are tests used throughout the industrial and scientific communities to study chemical reactions and behavior of electronic structures. They are extremely helpful in the monitoring of nano based dielectrics, used in super /ultra capacitors or self-assembled monolayers (SAMs). The Cyclic Voltammetry test applies a ramping voltage to a device and measures the resulting current. In acapacitor-like structure the current reveals loss in the dielectric as well as degradation over time. CyclicVoltammetry is used to characterize the performance of supercapacitors and ultracapacitors formed using various nano-technologies. It is also useful in the studies of self-assembled monolayers used for sensors.
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MOS C-V Measurement and Analysis
Materials Development Corporation
MOS capacitance-voltage measurement is one of the most common process monitoring diagnostics employed in device manufacturing. A vast amount of information can be derived from this simple test.
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Interface Trap Density Analysis Option
Materials Development Corporation
MDC offers interface trap density analysis using both the Conductance-Frequency and Quasi-statictechniques. The Conductance-Frequency method is recommended for fine-tuning of processes where the highest resolution is needed. The Quasi-static technique is recommended where moderate to high levels of interface traps are monitored, such as in radiation damage studies. Requires quasi-static option or variable frequency option.
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Mercury Probes
Materials Development Corporation
MERCURY PROBES are precision instruments that enable rapid, convenient, and non-destructive measurements of semiconductor samples by probing wafers with mercury to form contacts of well-defined area.
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Srive-Level Capacitance Profiling (DLCP) Measurement
Materials Development Corporation
Drive-levelcapacitance profiling is an extremely useful technique to characterize amorphoussilicon or other semiconductor material with large concentrations of deep band gap states.
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Semiconductor CharacterizationSystem
Keithley 4200
Materials Development Corporation
The MDC CSM/Win-4200 System integrates the extraordinary power of the CSM/Win softwarewith the power of the new Keithley 4200-SCS. Measure capacitance, voltage, and current down to sub-femtoamp levels.
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Overlay Plots
Materials Development Corporation
The overlay option gives the user the ability to overlay several plots on one graph for comparison. Simply click and drag the mouse from the MDC logo at the bottom right corner of a plot to an open area on the screen to produce the overlay plot. By dragging other plots to this overlay, each plot will be added.
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Ion Implant Analysis Option
Materials Development Corporation
Computes active dose, range, and straggle. Can model implants with various doses, energies and cap materials. Overlays theoretical and actual plots.
