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Inductively Coupled Plasma Mass Spectrometry / ICP-MS Systems
Agilent ICP-MS systems utilize innovative technology to deliver excellent sensitivity, accuracy, ease of use and productivity. Our 7800 and 7900 quadrupole ICP-MS systems offer the highest matrix tolerance, widest dynamic range and most effective interference removal for trace elements across most typical applications. The 8900 Triple Quadrupole ICP-MS (ICP-QQQ) adds MS/MS operation, providing precise control of reaction cell processes to ensure the most consistent and accurate results, resolving interferences that are beyond the capability of quadrupole and sector-field high resolution ICP-MS.
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Inductively Coupled Plasma Spectroscopy (ICP-OES/MS), ICP Analysis Services
ICP-OES measures the light emitted at element-specific characteristic wavelengths from thermally excited analyte ions . This light emitted is separated and measured in a spectrometer, yielding an intensity measurement that can be converted to an elemental concentration by comparison with calibration standards. ICP-MS (ICP-Mass Spec) measures the masses of the element ions generated by the high temperature argon plasma. The ions created in the plasma are separated by their mass to charge ratios, enabling the identifcation and quantitation of unknown materials. ICP-MS offers extremely high sensitivity (i.e. low detection limits) for a wide range of elements
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Inductively Coupled Plasma Emission Spectroscopy
Inductively Coupled Plasma Emission Spectroscopy
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Multichamber Plasma CVD & RIE Processing Systems
Model MPS-2000
Accurate linear wafer transporter with low particulate generation. Automated options with programmable controls. Safety interlocked with local and global interfaces. Base pressures to 10-8 torr. Optional clean room load lock entry port. Option for inductively coupled plasma processing is available. Complete and ready to operate.
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Chemical Analysis and Corrosion Testing
Performing chemical analysis of metal alloys including both ferrous and non-ferrous alloys.Chemical analysis involves determining the chemical constituents of metals and related materials.An industry leader and co-operating laboratory for qualifying Calibration Standards for Chemical Analysis.Our chemical laboratory processes include Spectroscopy – Optical Emission Inductively Coupled Plasma, gas analysers, wet chemical, Intercrystalline/ Intergranular Corrosion (including G28, G48 etc).
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Inductively Coupled Plasma Mass Spectrometer
ICPMS-2030
With its newly developed collision cell and optimized internal structure, the ICPMS-2030 provides superior sensitivity. At the same time, thanks to the adoption of its proprietary mini-torch unit and provision of an Eco mode, the quantity of argon gas needed for analyses has been greatly reduced to the industry's lowest levels. As a result, low running costs are assured. The Development Assistant function of the software automatically sets the optimal analysis conditions for quantitative analysis. Then, after measurements are complete, the Diagnosis Assistant function automatically checks the validity of the necessary data. While reducing the burden on the user, the efficiency of analyses is enhanced and the reliability of the data can be increased. It complies with FDA 21 CFR Part 11.
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Inductively Coupled Plasma Spectrometry
Is an analytical technique that can be used to measure elements at trace levels in biological fluids.
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Inductively Coupled Plasma Optical Emission Spectroscopy / ICP-OES Systems
Industry-leading performance, speed and ease of use – no compromises
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Desolvating Nebulizer
Aridus3
The CETAC Aridus3 Desolvating Nebulizer System is a specialized liquid sample introduction accessory for inductively coupled plasma mass spectrometry (ICP‑MS). The Aridus3 can enhance analyte sensitivity up to 10 times or more and can greatly reduce solvent-based interferences such as oxides and hydrides.The Aridus3 couples a low-flow (50, 100, or 200 µL/min) PFA nebulizer and a heated PFA spray chamber with an inert fluoropolymer membrane. This combination provides enhanced analyte sensitivity while reducing solvent based interferences such as oxides and hydrides. The Aridus3 is particularly advantageous for small volume and highly corrosive samples such as those generated in the earth sciences and the semiconductor industry.
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ICP-OES Analyzer
ARCOS
SPECTRO Analytical Instruments GmbH
For the most demanding elemental analyses in industry and research. ARCOS analyzer represents a new pinnacle of productivity and performance for inductively coupled plasma optical emission spectrometers. SPECTRO ARCOS excels in industrial and academic applications for the most advanced elemental analysis of metals, chemicals, petrochemicals, and other materials.
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ICP Plasma System
The AXIC IsoLok® Inductively Coupled Plasma (ICP) Load-Locked Processing System from AXIC, Inc. defines a new concept in Deep Reactive Ion Etch (DRIE) and low temperature-low damage Plasma Enhanced Chemical Vapor Deposition (ICP-PECVD) plasma processing. The system is based on a modular design starting with a universal chamber and cabinet unit with ICP etch or deposition bottom electrodes available for easy installation into the chamber unit combined with a load-lock. We are confident you will find the ease of use, variety of plasma processes, serviceability and attractive pricing unsurpassed by any other plasma product in the market.
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Inductively Coupled Plasma
Inductively Coupled Plasma Techniques can be very powerful tools for detecting and analyzing trace and ultra-trace elements. Over the past years, ICP-MS has become the technique of choice in many analytical laboratories for providing the accurate and precise measurements needed for today’s demanding applications and for providing required lower limits of detection.
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Coupled Cavity TWTs
Communications & Power Industries
• Frequencies from 2.7 to 37.5 GHz• Peak levels: 500 W to 180 kW• Cooling type: air, liquid, conduction• Depressed or grounded collectors• CW (Continuous Wave) and Pulsed
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UV Plasma Sources
UVS300|UVS 10/35
The UVS300 and UVS 10/35 are UV Plasma sources with high intensity, working with different gases.
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Thin Films, Plasma and Surface Engineering
A residual gas analyser for vacuum process analysis. Measures the vacuum process gas composition, contamination and leak detection.
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High Power Microwave Plasma System
The High Power Microwave Plasma System features the High Power Microwave Plasma Source, generator (with isolator) and auto-tuning system comprised of the Precision Power Detector and SmartMatch® unit. This comprehensive system delivers a high concentration of radicals with low electron temperatures for the highest dissociation and lowest recombination rates.
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Plasma CVD & Etching Systems
MODEL DRIE-1000
A High Quality Plasma Deposition & Etch System, Ideal for R&D and Small Scale Production. Modified designs with capabilities of 12" wafers. Substrate heating to 500 C. Top loading / Optional loadlock. Multifunctional plasma network. Diversified pumping configurations. Variable electrode spacing. Customized features and components for specific applications.
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Chemical Downstream Plasma Source
The AX7610 is a microwave plasma source for remote plasma applications. With replaceable quartz or sapphire plasma tubes, the AX7610 downstream source offers configuration flexibility to meet the most demanding application process parameters. The quartz tube version is ideally suited for production of atomic oxygen, nitrogen or argon. The sapphire tube version is compatible with much more severe CF4 CHF3 and NF3 chemistries.
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R*evolution® Remote Plasma Source
The innovative R*evolution® Remote Plasma Source combines field-proven, low-field toroidal plasma technology with an actively cooled plasma chamber made of high purity quartz, significantly reducing oxygen, hydrogen and nitrogen atomic gas loss through wall recombination. Self-contained and compact, R*evolution delivers up to 10 slm of oxygen radicals from a 6kW power supply with true power accuracy of <1% resulting in a high density, extremely clean radical source for photoresist strip and an optimal clean rate greater than 12 microns/min-1. R*evolution can be used for other surface preparation applications.
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DC Coupled Current Probe
34134A
Measure a wide range of applications with this battery-powered, clamp-on probe; use with DMMs or voltmeters
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Plasma Process Monitors
Plasma process monitors to monitor plasma emissions during semiconductor manufacturing processes such as etching, sputtering and CVD.
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High Density Plasma Etching System for 200mm substrates
Model DRIE-1200-LL-ICP
Single process chamber for high rate plasma etching of 200mm wafers. Loadlocked. Stainless steel construction. Capabilities of smaller, multiple wafer throughput. Substrate materials include (but are not limited to) silicon, silicon oxynitrides, SiC, SiGe, Aluminum, and III-V compounds including GaAs, GaN, GaP, and InP. Stable plasma generation capabilities to below 1 mTorr. Five, Six, or Eight gas mass flow controllers are standard. Expanded or reduced numbers are available upon request.
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Remote Plasma Sources
Semiconductor and Electronic Thin Film applications use plasma sources to generate low-energy ions and radicals to react with material surfaces and chamber walls to remove contaminants and act as a precursor to aid in material deposition. MKS provides multiple options for radical generation including Toroidal and Microwave based Remote Plasma Sources supporting Fluorine, NF3, oxygen, nitrogen and hydrogen process chemistries.
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Elite™ 13.56 MHz RF Plasma Generators
The elite™ Series of RF plasma generators provides state-of-the art technology in a compact air-cooled package. The elite is designed with high speed closed loop control, a class E RF deck and a switching modulator for superior output performance. The elite design utilizes a single printed circuit board assembly for the full rack product virtually eliminating all internal wires and connectors and thereby providing the highest reliability available.
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Ideal Remote Plasma Source For Oxygen-Based Processes
Rapid OX
Reduce recombination effects and extend the lifetime of oxygen radicals thanks to Rapid OX's removable quartz liner. When compared to anodized chambers, the resultant reactive species extended lifetime improves photoresist strip rates. And because the quartz liner is easily installed or removed by the operator, it decreases downtime and significantly lowers replacement costs.
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Remote Plasma Source
Xstream
The highly efficient Xstream® RPS dissociates large volumes of NF3 and quickly cleans chambers, improving your overall tool performance. Its plasma chamber showcases high-purity aluminum alloy and patented cooling capabilities. Built to last for years without repair or expensive chamber coatings, the Xstream RPS is the smart choice for dependability and efficient performance.
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Microwave Plasma Atomic Emission Spectroscopy / MP-AES Systems
Agilent’s industry-leading microwave plasma-atomic emission spectrometer (MP-AES) systems are powerful, cost-efficient and easy-to-use for a wide range of applications from routine analysis to complex precious metals analysis. By running on air, Agilent MP-AES systems both cost less and are safer than alternative methods that rely on flammable gases. The innovative Agilent 4210 MP-AES system offers higher sensitivity and faster throughput capabilities than flame atomic absorption.
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Remote Plasma Sources
Equip your manufacturing and abatement processes with high functionality and exceptional reliability. Customize your chemistry. Expand your operating range. Deliver higher process rates. Advanced Energy’s remote plasma sources offer sophisticated options in streamlined designs.
